Memory cell pillar including source junction plug

ABSTRACT

Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.

BACKGROUND

Many electronic systems, such as computers and mobile devices, usuallyinclude one or more memory devices to store information. Memory devicesinclude memory cells. Some memory devices may include memory cellsarranged in multiple levels of the device. As demand for storagecapacity increases, the number of memory cell levels of someconventional memory devices may increase to accommodate the increasedstorage capacity. In some cases, however, fabricating such memorydevices and maintaining reliable memory operations may pose a challenge.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A through FIG. 1J show different portions of a fabrication processto form memory cells of a memory device, according to an embodiment ofthe invention.

FIG. 2A through FIG. 2J show different portions of another fabricationprocess to form memory cells of a memory device, according to anembodiment of the invention.

FIG. 3 shows a portion of a memory device that can be a variation of thememory device of FIG. 1A through FIG. 1J, according to an embodiment ofthe invention.

FIG. 4 shows a portion of a memory device that can be a variation of thememory device of FIG. 2A through FIG. 2J, according to an embodiment ofthe invention.

DETAILED DESCRIPTION

The description that follows includes illustrative apparatuses(circuitry, devices, structures, systems, and the like) and methods(e.g., processes, protocols, sequences, techniques, and technologies)that embody the disclosed subject matter. In the following description,for purposes of explanation, numerous specific details are set forth inorder to provide an understanding of various embodiments of the subjectmatter. After reading this disclosure, however, it will be evident toperson of ordinary skill in the art that various embodiments of thesubject matter may be practiced without these specific details. Further,well-known apparatuses, methods, and operations have not been shown indetail so as not to obscure the description of various embodiments.

Although various embodiments discussed below focus on athree-dimensional (3D) NAND memory device, the embodiments are readilyapplicable to a number of other electronic devices. Consequently, thedescribed embodiments are merely given for clarity in disclosure and arenot limited to NAND memory devices or even to memory devices in general.

Generally, a 3D electronic device may be considered to be a deviceformed by a process that combines multiple levels of electronic devices(e.g., one device formed over another) using planar formations (e.g.,multiple devices on a single level). Since multiple levels in 3D devicesmay use approximately the same area on a substrate, an overall densityof devices (e.g., memory devices) can be increased in relation to thenumber of levels. Generally discussed herein are three-dimensional (3D)memories, memory cells, and methods of making and using the same. In oneor more embodiments, a 3D vertical memory can include a memory cellstack sharing a common cell pillar. A memory cell stack can include astack of at least two memory cells and a dielectric between adjacentmemory cells, where each memory cell includes a control gate and acharge storage structure (e.g., a floating gate, charge trap, or othermemory structure) configured to store electrons or holes accumulatedthereon. Information is represented by the amount of electrons or holesstored by the cell.

The methods and apparatuses discussed herein can be extended to NORdevices, microcontroller devices, other memory types, general purposelogic, and a host of other apparatuses. Different 3D devices includingrepeating devices (e.g., SRAM), transistors, standard CMOS logic, and soon may all benefit from application of the fabrication processesdisclosed herein.

FIG. 1A through FIG. 1J show different portions of a fabrication processto form memory cells (e.g., memory cell stack of a memory array) of amemory device 100, according to an embodiment of the invention. Thetechniques and fabrication processes described herein can be extended toa number of different apparatuses (e.g., in addition to memory devices)to be fabricated using different processes, including, for example, athree-dimensional process. However, fabrication of memory device 100(e.g., a vertical NAND memory device) will be described below to retainclarity and consistency in the discussions that follow.

In FIG. 1A, formation of memory device 100 can include forming a sourcematerial 101 and different levels of materials formed over sourcematerial 101. The different levels of materials may include differentdielectric materials and semiconductor materials as discussed in moredetail below. Each of these and other materials described herein may beapplied, deposited, or otherwise formed according to techniques andmethods known independently in the art. The techniques and methods mayinclude one or more deposition activities, such as chemical vapordeposition (CVD), atomic level deposition (ALD), physical vapordeposition (PVD), or other techniques. Forming multiple materials indifferent levels may be accomplished via stacked deposition operations.

Although the process acts and operations described herein may refer toparticular conductor, semiconductor, or dielectric materials (e.g.,silicon, silicon dioxide, silicon nitride, or others), a person ofordinary skill in the art and familiar with this disclosure willrecognize that other conductor, semiconductor, and dielectric materialsmay be substituted and still be within a scope of the disclosed subjectmatter. Thus, the material choices and selections described herein aremerely provided as an aid in understanding some examples of afabrication process.

For example, different types of semiconductor materials (e.g.,single-crystal or amorphous silicon, germanium, other elementalsemiconductor materials, compound semiconductor materials, etc.) may beused as an alternative for or in conjunction with other types ofsemiconductor material. Additionally, different types of dielectricmaterials, such as tantalum pentoxide (Ta₂O₅), silicon nitride(Si_(x)N_(y)), aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), and avariety of other organic or inorganic dielectric materials, may be usedas an alternative to or in conjunction with others of the materialsdescribed. Also, other combinations of materials may also be substitutedor included. For example, in certain applications, describedsemiconductor materials may be substituted with conductor materialsincluding, for example, silver (Ag), copper (Cu), Aluminum (Al), zinc(Zn), platinum (Pt), tungsten (W), titanium (Ti), or tantalum (Ta).

Further, different formation, process, and other discussions that followmay refer to one material formed (e.g., placed), for example, “over” or“above” another material. Such descriptors are relative terms only andobviously depend upon an exact orientation of any resulting device.However, a person of ordinary skill in the art will readily understandthe context of such relative terms upon reading and understanding thedisclosure provided herein in conjunction with the respective drawings.

In FIG. 1A, source material 101 may include, for example, aconductively-doped polysilicon material or a conductively-doped regionof a semiconductor substrate. As referred to herein, a semiconductorsubstrate can be any of the different types of substrates used in thesemiconductor and allied industries, such as silicon wafers, otherelemental semiconductor wafers, compound semiconductor wafers, thin filmhead assemblies, polyethylene-terephthalate (PET) films deposited orotherwise formed with a semiconducting material layer (followed by anannealing activity, such as excimer laser annealing (ELA) in someembodiments), as well as numerous other types of substrates knownindependently in the art. Also, in some embodiments, source material 101may be formed over a non-semiconductor material (e.g., quartz, ceramic,etc.), or vice-versa.

As shown in FIG. 1A, an etch stop 105 is formed over source material101. Etch stop 105 can directly contact source material 101. In asubsequent process (e.g., an etch process), an opening through differentlevels of material over etch stop 105 may be formed. Etch stop 105 mayallow the depth of such opening to be controlled.

Etch stop 105 may include a high dielectric constant (high-κ) materialsuch as aluminum oxide (Al₂O₃) or other high dielectric constant oxides.Other high-κ materials that can be used for etch stop 105 include, forexample, hafnium silicate (HfSiO₄), zirconium silicate (ZrSiO₄), hafniumdioxide (HfO₂), and zirconium dioxide (ZrO₂). Generally, a highdielectric constant material may be considered as any material having adielectric constant equal to or greater than the dielectric constant ofsilicon dioxide. Thus, etch stop 105 may include a material having adielectric constant greater than the dielectric constant of silicondioxide. The dielectric constant for silicon dioxide is approximately3.9.

As shown in FIG. 1A, a source-side select gate (SGS) structure includinga semiconductor material 109 (e.g., conductively-doped polysilicon) anda dielectric material 111 can be formed over etch stop 105. Dielectricmaterial 111 may include silicon dioxide (e.g., SiO₂) that can bethermally-grown silicon dioxide (e.g., SiO₂) material or depositedsilicon dioxide material.

Semiconductor material 109 (e.g., SGS select gate material) can formpart of a select gate (SGS gate) of the SGS structure. Depending upon anetchant used in later process steps, semiconductor material 109 may beselected to be a p-type polysilicon (e.g., doped with boron). Forexample, as discussed in more detail below, a subsequent etch-backprocess step may employ tetramethyl-ammonium hydroxide (TMAH) as anetchant. TMAH selectively etches n-type and undoped polysilicon but mayslowly etch p-type polysilicon. Selecting semiconductor material 109 tobe p-type polysilicon may reduce the amount of semiconductor material109 that is etched during a subsequent TMAH etch process.

As shown in FIG. 1A, a number of alternating materials 112 and 113A anda cap material 114 can be formed over dielectric material 111. Formingalternating materials 112 and 113A begins a fabrication process to forma memory cell stack (e.g., vertical memory cells of a memory array ofmemory device 100). Cap material 114 provides protection for theunderlying materials during subsequent process steps. Cap material 114may include one more materials including oxides, nitrides, high-κdielectric materials, polysilicon, and other materials independentlyknown in the art.

As shown in FIG. 1A, each of the levels of dielectric materials 112 isseparated from a respective adjacent one of the levels of dielectricmaterials 112 by at least a respective one of the levels of theconductor materials 113A. Each of dielectric materials 112 may includesilicon dioxide or a number of other dielectric materials. Conductormaterials 113A may include conductively-doped polysilicon, metal (e.g.,tungsten) or a number of other conductor or semiconductor materials. Anexample material for conductor materials 113A includes an n-typepolysilicon.

In FIG. 1B, forming memory device 100 can include forming a pillaropening (e.g., a hole) 110. Pillar opening 110 is performed inpreparation for a subsequent channel formation, discussed below, and maybe etched or otherwise formed to be a partial via of different shapes ora trench. For example, pillar opening 110 can be trench. In anotherexample, pillar opening 110 may have geometries other than a trench.However, for ease in understanding fabrication operations of thedisclosed subject matter discussed herein, pillar opening 110 can beconsidered to be an opening (e.g., an aperture) formed at leastpartially through the different level of materials discussed above.

Pillar opening 110 can be formed by an anisotropic dry etch process(e.g., reactive ion etch (RIE) or plasma etch). Depending upon materialsselected, pillar opening 110 may be formed by one or more differenttypes of chemical etchants (e.g., such as potassium hydroxide (KOH) ortetramethyl ammonium hydroxide (TMAH)), mechanical techniques, othertypes of ion milling, or laser ablation techniques. Related industriessuch as those involved in constructing micro-electrical mechanicalsystems (MEMS) devices may independently supply techniques for stillfurther means to form pillar opening 110.

Formation of pillar opening 110 provides opening for later formation ofchannel material. The depth of pillar opening 110 may be controlled,such that its depth can be at the level of etch stop 105. Formation ofpillar opening 110 may etch partially into etch stop 105. Etch stop 105may allow the depth of pillar opening 110 to be controlled. Thethickness of etch stop 105 may be dependent on (e.g., proportional to)the number of levels of memory cells (corresponding to the number oflevels of materials 112 and 113A) formed over etch stop 105. Forexample, a higher number of levels of memory cells may result in agreater thickness of etch stop 105 being used. As an example, etch stop105 may have a thickness greater than 30 nanometers. An example range ofthe thickness of etch stop 105 can be from approximately 30 nanometersto approximately 100 nanometers.

In FIG. 1C, a control-gate recess operation forms a number of controlgates 113B from conductor materials 113A (FIG. 1A), thereby forming arecessed pillar opening 120. Control gates 113B can be formed by etchingor otherwise have portions of each of conductor materials 113A (FIG. 1A)removed laterally (forming recesses 113 in conductor materials 113A awayfrom the sidewall of pillar opening 110). An isotropic etchant with arelatively high selectivity ratio may be used to form recesses 113.

As an example, TMAH may be used to form recesses 113 in recessed pillaropening 120 shown in FIG. 1C. Alternatively, a person of ordinary skillin the art will recognize that other types of chemical and/or mechanicaletch or formation processes may be used with an appropriate materialselection. For example, other isotropic etchants may also be employedsuch as a hydrofluoric/nitric/acetic (HNA) acid chemical etchant.

The etch operation (e.g., using TMAH) (and potential subsequent cleaningsteps) that forms recessed pillar opening 120 may also form an opening105A in etch stop 105, such that a portion 101B of source material 101can be exposed at recessed pillar opening 120. As described below,recessed pillar opening 120 (that includes opening 105A of etch stop105) allows a conductive plug (e.g., conductively-doped polysiliconmaterial) to be subsequently formed on portion 101B of source material101 and to occupy at least a portion of opening 105A of etch stop 105.As also described below, recessed pillar opening 120 also allows achannel material to be subsequently formed.

In FIG. 1D, a charge blocking dielectric (CBD) material 125A, such as aninter-polysilicon dielectric (IPD) material, can be formed on thesidewalls of recessed pillar opening 120 of FIG. 1C, followed by acharge-storage material 127A being formed adjacent CBD material 125A. Asshown in FIG. 1D, CBD material 125A and charge-storage material 127A areprimarily or entirely formed on opposing faces of recessed pillaropening 120 (FIG. 1C). The formation of CBD material 125A andcharge-storage material 127A in recessed pillar opening 120 (FIG. 1C)results in a pillar opening 130.

In FIG. 1D, CBD material 125A may include one or more of the differentdielectric materials discussed herein, including different high-κdielectric materials. For example, CBD material 125A may include anoxide-nitride-oxide (ONO) material. Charge-storage material 127A mayinclude one or more of the semiconductor materials discussed herein. Forexample, charge-storage material 127A may include polysilicon. Inanother example, charge-storage material 127A may include siliconnitride (e.g., Si₃N₄).

In FIG. 1E, an etch process substantially removes excess amounts of CBDmaterial 125A and charge-storage material 127A from sidewalls and bottomof pillar opening 130 of FIG. 1D, forming a cleared pillar opening 140and leaving a number of charge-storage structures 127B in recesses 113.Each of charge-storage structures 127B in each of recesses 113 iselectrically separated from at least proximate (e.g., adjacent) ones ofcontrol gates 113B by CBD material 125B in each recess 113. Techniquesto remove the materials from pillar opening 130 are known independentlyin the art.

Each of charge-storage structures 127B can be configured to storeinformation and can form part of a memory cell. FIG. 1E shows fourmemory cells (associated with four charge-storage structures 127B) onfour different levels of memory device 100. These memory cells are partof a memory cell stack of memory device 100. FIG. 1E shows memory device100 having four levels of memory cells as an example. The levels ofmemory cells in the memory cell stack of memory device 100 can vary.

In FIG. 1F, a tunneling material 129 can be formed on sidewalls andbottom of cleared pillar opening 140, followed by formation of asacrificial liner 131A. Tunneling material 129 may include one or moreof the dielectric materials discussed herein. Sacrificial liner 131Aprotects tunneling material 129 from a subsequent punch-etch operation.

Tunneling material 129 may be formed from a number of dielectricmaterials discussed herein that allow for Fowler-Nordheim tunneling ofelectrons or direct tunneling of holes or other injection mechanisms.For example, tunneling material 129 may include deposited and/orthermally-grown silicon dioxide.

Sacrificial liner 131A may include polysilicon. In some cases, iftunneling material 129 is a thermally-grown silicon dioxide, sacrificialliner 131A may include a deposited silicon dioxide that can bechemically removed with a buffered-oxide etchant (BOE), such as acombination of ammonium fluoride (NH₄F) and hydrofluoric acid (HF) thatreadily etches materials such as silicon dioxide, but has little effecton materials such as polysilicon. In other cases, sacrificial liner 131Amay include the same material as that of conductor materials 113A, andcan be removed using an isotropic etchant, such as a directional RIE orplasma etch. Another example material for sacrificial liner 131Aincludes another dielectric such as borophosphosilicate glass (BPSG)supplied from a tetraethoxysilane (TEOS) source. A further examplematerial for sacrificial liner 131A includes a solvent-based liquid thatis applied to substrates using a spin-coat process, such as photoresist.The use and application of these different materials for sacrificialliner 131A will be understood by a person of ordinary skill in the artupon reading and understanding the description provided herein.

In FIG. 1G, sacrificial liner portions 131B can be formed by, forexample, a punch-etch operation that clears at least the bottom portionof the sacrificial liner 131A (FIG. 1F) and the bottom portion oftunneling material 129. This opens pillar opening 140 to source material101 and again exposes portion 101B of source material 101 at pillaropening 140.

In FIG. 1H, sacrificial liner portions 131B (FIG. 1G) are removed,leaving tunneling material 129 on sidewalls of a pillar opening 150.

In FIG. 1I, a conductive plug 141 can be formed on portion 101B ofsource material 101. Conductive plug 141 directly contacts portion 101B.Conductive plug 141 can be considered as a source junction plug ofmemory device 100. Tunneling material 129 is on sidewalls of pillaropening 150 while conductive plug 141 is formed to prevent the materialof conductive plug 141 from contacting other conductive material (e.g.,semiconductor material 109) besides source material 101.

Forming conductive plug 141 can include growing an epitaxial polysiliconfrom portion 101B of source material 101 selective to tunneling material129. Conductive plug 141 and source material 101 can have the same typeof material (e.g., conductively-doped polysilicon of n-type).

The process of forming conductive plug 141 can also include introducingdopants into the material (epitaxial polysilicon) that forms conductiveplug 141. The dopants can be introduced into the material (that formsconductive plug 141) while the material is formed or after the materialis formed. Examples of the dopants include phosphorus or arsenic. Thematerial of conductive plug 141 can be heavily doped. For example, adoping concentration in range from approximately 2E20 atoms/cm³ toapproximately 1E21 atoms/cm³ may be used. The doping process can beperformed while the material of conductive plug 141 is formed (e.g.,in-situ doping).

As shown in FIG. 1I, conductive plug 141 has a thickness 135, which mayalso be the thickness of etch stop 105. In some cases, the thickness ofconductive plug 141 can be less than, equal to, or greater thanthickness 135. However, forming conductive plug 141 having a thicknessgreater than the thickness (e.g., thickness 135) of etch stop 105 maycause diffusion (unwanted diffusion) of dopants from conductive plug 141to other materials (e.g., semiconductor material 109). This diffusionmay change an intended threshold voltage (Vt) value of a transistor(e.g., SGS transistor) that includes a portion of semiconductor material109 as its gate. The change in Vt value may affect the performance ofmemory device 100. Forming conductive plug 141 with a thickness lessthan a certain value of the thickness of etch stop 105 (e.g., less thanone-quarter of thickness 135 in some cases or less than one-half ofthickness 135 in some other cases) may not allow most of theenhancements provided by conductive plug 141 to be achieved. Thus, insome cases, in order to avoid unwanted diffusion, as mentioned above,and to achieve most of the enhancements provided by conductive plug 141,the thickness of conductive plug 141 may be selected to be in a rangefrom at least one-half of the thickness of etch stop 105 up to thethickness (e.g., 135) of etch stop 105 in some cases. In some othercases, the thickness of conductive plug 141 may be selected to be in arange from at least one-quarter of the thickness of etch stop 105 up tothe thickness of etch stop 105.

In FIG. 1J, a channel material 151 and dielectric material 160 can beformed, and cap material 114 can be removed. Channel material 151 can beformed on sidewalls and bottom of pillar opening 150, such that channelmaterial 151 can have a bottom and sidewalls, forming a cup shape withan inner space without channel material 151. Dielectric material 160 canbe formed, such that it occupies the space surrounded by at least aportion (e.g., surrounded by the bottom and vertical sidewalls) ofchannel material 151. In an alternative process, dielectric material 160can be omitted and channel material 151 can fill pillar opening 150including the space occupied by the omitted dielectric material 160.

Channel material 151 may include polysilicon or other semiconductormaterial. For example, channel material 151 may includeconductively-doped polysilicon material. Dielectric material 160 mayinclude dielectric materials described above (e.g., silicon dioxide,nitride, or other dielectric materials).

The process of forming channel material 151 can also include introducingdopants into channel material 151. Examples of the dopants includephosphorus or arsenic. A doping concentration for channel material 151may be different from a doping concentration for conductive plug 141.For example, a doping concentration in range from approximately 1E18atoms/cm³ to approximately 1E19 atoms/cm³ may be used for channelmaterial 151. The doping process can be performed while channel material151 is formed (e.g., in-situ doping).

Channel material 151 and dielectric material 160 may be planarized(e.g., using a chemical-mechanical polishing (or planarization) (CMP)technique) before cap material 114 is removed. Cap material 114 may beremoved after the CMP of channel material 151 and dielectric material160. Alternatively, cap material 114, channel material 151, anddielectric material 160 may be removed in one step (e.g., in the sameCMP). After cap material 114 is removed, another CMP may be performed sothat an upper surface tunneling material 129, an upper surface ofchannel material 151, an upper surface of dielectric material 160 arecoplanar with an upper surface of the top most level of dielectricmaterials 112.

Channel material 151 and conductive plug 141 are portions of a cellpillar of memory device 100. Thus, as described above with reference toFIG. 1A through FIG. 1J, forming the cell pillar of memory device 100can include forming different portions of the cell pillar at differenttimes. For example, forming the cell pillar of memory device 100 caninclude forming an initial portion (e.g., a solid portion includingconductive plug 141 in FIG. 1I) of the cell pillar from aconductively-doped polysilicon material (e.g., source material 101).Then, another portion (e.g., a hollow portion including channel material151 in FIG. 1J) of the cell pillar can be formed that contacts theinitial portion (e.g., conductive plug 141) of the cell pillar.

A person of ordinary skill in the art and familiar with this disclosurewill recognize that additional processes can be performed to completememory device 100. For example, additional processes may be performed toform an additional select gate material (not shown in FIG. 1J) that canform part of a drain-side select gate (SGD) over the levels of memorycells (e.g., over the memory cell stack) of memory device 100. Theadditional processes may also form data lines (e.g., bit lines), whichare not shown in FIG. 1J, above the levels of memory cells of memorydevice 100, such that the levels of the memory cells are between suchdata lines and source material 101. The additional processes also formfeatures that couple one of such data lines to channel material 151.This allows the cell pillar (which includes channel material 151 andconductive plug 141) of memory device 100 to conduct current between adata line of memory device 100 and a source (which includes sourcematerial 101) of memory device 100 in a memory operation (e.g., a reador write operation) of memory device 100.

Including conductive plug 141 in a cell pillar of memory device 100 mayenhance operations of memory device 100. For example, in a memorydevice, such as memory device 100, a good overlap of a junction atportion 101B of source material 101 and semiconductor material 109 (partof the SGS structure) may be considered in order to achieve good stringcurrent (e.g., cell pillar current) during a memory operation (e.g.,read or write) and high enough gate-induced drain leakage (GIDL) currentto enable fast erase operation. In some cases, such a good overlap maybe limited by the thickness (e.g., thickness 135) of etch stop 105located between source material 101 and semiconductor material 109. Forexample, in some cases, etch stop 105 may have a relatively greaterthickness (e.g., greater than 30 nanometers) to allow control of a depthof a pillar opening (e.g., pillar openings 110 (FIG. 1B) or 120 (FIG.1C) formed in levels of materials over etch stop 105. This thickness ofetch stop 105 may prevent a good overlap of source material 101 andsemiconductor material 109. Further, as shown in FIG. 1C, opening 105Amay partially extend to portion 101B of source material 101. Thisincreases the distance between source material 101 and semiconductormaterial 109, thereby further limiting a good overlap of source material101 and semiconductor material 109.

Without conductive plug 141 in FIG. 1J, to achieve good string currentand high enough GIDL as mentioned above, source material 101 may beformed with a relatively higher amount of dopants (e.g., may be heavilydoped) in order to allow an adequate amount of dopants from sourcematerial 101 to diffuse into the portion of channel material 151adjacent to the edge (at sidewall portion 209) of semiconductor material109. In some cases, however, a higher amount of dopants in sourcematerial 101 may lead to a variation in the diffusion in the overlap ofsource material 101 and semiconductor material 109. This may lead to avariation in the string current and the threshold voltage of atransistor (e.g., SGS transistor) that includes a portion ofsemiconductor material 109 as its gate.

Conductive plug 141 places portion 101B (e.g., source junction) closerto the edge (at sidewall portion 209) of semiconductor material 109,independent of the thickness (e.g., thickness 135) of etch stop 135. Asshown in FIG. 1J, conductive plug 141 (which can be heavily doped) canbe viewed as an extension of source material 101 and that directly facesthe edge (at sidewall portion 209) of semiconductor material 109. Thisenables a good overlap of source material 101 and semiconductor material109 (through conductive plug 141) to be achieved, independent ofthickness (e.g., thickness 135) of etch stop 135. This overlap providedby conductive plug 141 may improve string current, GIDL, and thethreshold voltage in memory device 100.

FIG. 2A through FIG. 2J show different portions of a fabrication processto form memory cells (e.g., memory cell stack of a memory array) of amemory device 200, according to an embodiment of the invention. Some ofthe processes, features, and materials described below with reference toFIG. 2A through FIG. 2J can be similar to, or identical to, thosedescribed above with reference to FIG. 1A through FIG. 1J. Thus, forsimplicity, similar or identical processes, features, and materialsbetween FIG. 1A through FIG. 1J and FIG. 2A through FIG. 2J are notrepeated in the description associated with FIG. 2A through FIG. 2J.

As described above with reference to FIG. 1A through FIG. 1J, the levelsof memory cells (that include charge-storage structures 127B in FIG. 1H)of memory device 100 can be formed before conductive plug 141 (FIG. 1I)is formed. As described below with reference to FIG. 2A through FIG. 2J,the level of memory cells can be formed after a conductive plug (e.g.,conductive plug 241 in FIG. 2C) is formed. Further, as described above,semiconductor material 109 (e.g., SGS gate material) and channelmaterial 151 (FIG. 1J) of memory device 100 are separated from eachother by a dielectric material (e.g., tunneling material 129). Asdescribed below with reference to FIG. 2A through FIG. 2J, semiconductormaterial 109 and a channel material (e.g., channel material 251 in FIG.2J) of memory device 200 are separated from each other by a dielectric(e.g., two or more dielectric materials) that can be thicker thantunneling material 129 in FIG. 1J of memory device 100.

In FIG. 2A, a recessed pillar opening 220 can be formed through controlgates 113B, dielectric material 111, the SGS structure includingsemiconductor material 109, and etch stop 105. Forming recessed pillaropening 220 can include forming a recess 205 adjacent etch stop 105 andforming recesses 213 adjacent respective control gates 113B. Recess 205and recesses 213 can be formed at different times. Recesses 213 aresimilar to recesses 113 of FIG. 1C.

In FIG. 2B, a dielectric material 225A can be formed on sidewalls ofrecessed pillar opening 220 including sidewalls of each of recesses 213and sidewalls of recess 205. Dielectric material 225A may include asingle material (e.g., silicon dioxide) or a combination of two or morematerials (g., silicon dioxide and silicon nitride). For example,dielectric material 225A can be part of an IPD material (e.g., part ofONO material), such that it can include silicon dioxide and siliconnitride materials. The silicon dioxide material included in dielectricmaterial 225A can be formed on sidewalls of recessed pillar opening 220including sidewalls of each of recesses 213 and sidewalls of recess 205.Then, the silicon nitride material included in dielectric material 225Acan be formed on the silicon dioxide material.

As shown in FIG. 2B, a sacrificial material (e.g., silicon dioxide) 226can be formed adjacent dielectric material 225A to protect dielectricmaterial 225A from subsequent processes. For example, as shown in FIG.2B, a portion of sacrificial material 226 at the bottom is removed(e.g., by a punch-etch operation), such that portion 101B of sourcematerial 101 is exposed through recessed pillar opening 220.

In FIG. 2C, a conductive plug 241 can be formed on portion 101B ofsource material 101. Conductive plug 241 directly contacts portion 101B.Conductive plug 241 can be considered as a source junction plug ofmemory device 200. Conductive plug 241 can include the same material asthat of conductive plug 141 (FIG. 1I) and can be formed using similar,or identical, processes used to form conductive plug 141. Conductiveplug 241 can provide similar enhancements as that of conductive plug 141of FIG. 1J. After conductive plug 241 is formed, memory cells of memorydevice 200 can be formed, as described below.

In FIG. 2D, after conductive plug 241 is formed, sacrificial material226 is removed but dielectric material 225A is not removed. Dielectricmaterial 225A remains on a sidewall portion 209 (of recessed pillaropening 220) adjacent semiconductor material 109 (e.g., SGS gatematerial) and on a sidewall of recesses 205 adjacent etch stop 105. Aportion of sacrificial material 226 (FIG. 2C) may also remain in recess205 (FIG. 2D).

In FIG. 2E, a dielectric material 225B can be formed on dielectricmaterial 225A and on conductive plug 241. Dielectric material 225B mayinclude silicon dioxide. Dielectric material 225B (e.g., silicondioxide) and dielectric material 225A (e.g., silicon dioxide and siliconnitride) may form an IPD material that includes ONO material.

In FIG. 2F, a number of charge-storage structures 227B are formed inrecesses 213. Charge-storage structures 227B may include the samematerial as that of charge-storage structures 127B (FIG. 1E) and can beformed by a process similar to, or identical to, that of charge-storagestructures 127B.

As shown in FIG. 2F, each of charge-storage structures 227B in each ofrecesses 213 is electrically separated from at least proximate (e.g.,adjacent) ones of control gates 113B by dielectric materials 225A and225B in the recess. Each of charge-storage structures 227B can beconfigured to store information and can form part of a memory cell. FIG.2F shows four memory cells (associated with four charge-storagestructures 227B) on four different levels of memory device 200. Thesememory cells are part of a memory cell stack of memory device 200. FIG.2F shows memory device 200 having four levels of memory cells as anexample. The levels of memory cells in the memory cell stack of memorydevice 200 can vary.

In FIG. 2G, a tunneling material 229 can be formed on sidewalls andbottom of pillar opening 240, followed by formation of a sacrificialliner 231A. Tunneling material 229 may include one or more of thedielectric materials discussed herein. Sacrificial liner 231A protectstunneling material 229 from a subsequent punch-etch operation. Tunnelingmaterial 229 and sacrificial liner 231A may include the same materialsas tunneling material 129 and sacrificial liner 131A (FIG. 1F),respectively.

In FIG. 2H, sacrificial liner portions 231B can be formed by, forexample, a punch-etch operation that clears at least the bottom portionof the sacrificial liner 231A (FIG. 2G), the bottom portion of tunnelingmaterial 229, and the bottom of dielectric material 225B. The punch-etchoperation opens pillar opening 240 to source material 101 and exposesportion 101B of source material 101 at pillar opening 240.

In FIG. 2I, sacrificial liner portions 231B (FIG. 2G) are removed buttunneling material 229 and dielectric material 225B are not removed.Tunneling material 229 and dielectric material 225B remain on sidewallsof pillar opening 240 including sidewall portion 209 adjacentsemiconductor material 109 (e.g., SGS gate material).

The removal of sacrificial liner portions 231B may reduce the thicknessof conductive plug 241. For example, if conductive plug 241 has athickness (e.g., initial thickness) equal to thickness 135 afterconductive plug 241 is formed (FIG. 2C), then the thickness (e.g., finalthickness) of conductive plug 241 may be less than thickness 135 aftersacrificial liner portions 231B (FIG. 1I) are removed. Thus, tocompensate for a reduction in the thickness of conductive plug 241 (dueto the removal of sacrificial liner portions 231B), conductive plug 241may be formed with an initial thickness that is greater than itsintended (e.g., final) thickness. For example, if the final thickness ofconductive plug 241 is intended to be equal thickness 135, then theinitial thickness of conductive plug 241 can be greater than thickness135).

In FIG. 2J, a channel material 251 and dielectric material 260 can beformed, and cap material 114 can be removed. Channel material 251 can beformed on sidewalls and bottom of pillar opening 240, such that channelmaterial 251 can have a bottom and sidewalls forming a cup shape with aninner space without channel material 251. The bottom of channel material251 contacts conductive plug 241. Dielectric material 260 can be formedsuch that it occupies the space surrounded by at least a portion (e.g.,surrounded by the bottom and vertical sidewalls) of channel material251. In an alternative process, dielectric material 260 can be omittedand channel material 251 can fill pillar opening 240 including the spaceoccupied by the omitted dielectric material 260.

Channel material 251 and conductive plug 241 are portions of a cellpillar of memory device 200. Thus, as described above with reference toFIG. 2A through FIG. 2J, forming the cell pillar of memory device 200can include forming different portions of the cell pillar at differenttimes. For example, forming the cell pillar of memory device 200 caninclude forming an initial portion (e.g., a solid portion includingconductive plug 241 in FIG. 2C) of the cell pillar from aconductively-doped polysilicon material (e.g., source material 101).Then, another portion (e.g., a hollow portion including channel material251 in FIG. 2J) of the cell pillar can be formed that contacts theinitial portion (e.g., conductive plug 241) of the cell pillar.

A person of ordinary skill in the art and familiar with this disclosurewill recognize that additional processes can be performed to completememory device 200. For example, additional processes may be performed toform an additional select gate material (not shown in FIG. 2J) that canform part of a drain-side select gate (SGD) over the levels of memorycells (e.g., over the memory cell stack) of memory device 200. Theadditional processes may also form data lines (e.g., bit lines), whichare not shown in FIG. 2J, above the levels of memory cells of memorydevice 200, such that the levels of the memory cells are between suchdata lines and source material 101. The additional processes also formfeatures that couple one of such data lines to channel material 251.This allows the cell pillar (which includes channel material 251 andconductive plug 241) of memory device 200 to conduct current between adata line of memory device 200 and a source (which includes sourcematerial 101) of memory device 200 in a memory operation (e.g., a reador write operation) of memory device 200.

As shown in FIG. 2J, the dielectric materials adjacent sidewall portion209 between semiconductor material 109 (e.g., part of the SGS structure)and channel material 251 include different dielectric materials (e.g.,dielectric materials 225A and 225B (e.g., ONO) and tunneling material129). The total thickness of the combination of dielectric materials225A, 225B, and tunneling material 129 can be greater than the thicknessof tunneling material 129 (FIG. 1J) at the same location betweensemiconductor material 109 and channel material 151 of memory device 100in FIG. 1J. A greater dielectric thickness may allow a transistor (e.g.,SGS transistor) that includes a portion of semiconductor material 109 asits gate (FIG. 2J) of memory device 200 to have a higher thresholdvoltage than the transistor (e.g., SGS transistor) that includes aportion of semiconductor material 109 as its gate (FIG. 1J) of memorydevice 100. Thus, memory device 200 may operate with a transistor (e.g.,SGS transistor) having a higher threshold voltage than a transistor(e.g., SGS transistor) in memory device 100. In an alternativestructure, dielectric material 225B may be removed from memory device200.

FIG. 3 shows a portion of a memory device 300 that can be a variation ofmemory device 100 of FIG. 1J, according to an embodiment of theinvention. As shown in FIG. 3, memory device 300 can include featuresand materials similar to, or identical to, those of memory device 100 ofFIG. 1J. Thus, for simplicity, similar or identical features andmaterials in between FIG. 3 and FIG. 1A through FIG. 1J are not repeatedin the description associated with FIG. 3.

As shown in FIG. 3, memory device 300 can include a substrate 301 and amaterial 302 between source material 101 and substrate 301. Substrate301 may include a semiconductor (e.g., silicon) substrate. Material 302may include a transition metal combined with a semiconductor material.For example, material 302 may include a silicide material (e.g.,tungsten silicide). In an alternative structure, material 302 is omittedfrom device 300, such that source material 101 can directly contactsubstrate 301.

Memory device 300 can also include a recess 315 adjacent etch stop 105and between etch stop 105 and conductive plug 141, and CBD material 125Band charge-storage structures 127B located in recess 315. In someprocesses, CBD material 125B and charge-storage structures 127B inrecess 315 can be formed at the same time that CBD material 125B andcharge-storage structures 127B are formed in recesses 113 are formed(e.g., formed by similar processes described above with reference toFIG. 1A through FIG. 1E). Although recess 315 may include charge-storagematerial 127B, the charge-storage structures 127B in recess 315 is notconfigured to store information.

FIG. 4 shows a portion of a memory device 400 that can be a variation ofmemory device 200 of FIG. 2J, according to an embodiment of theinvention. As shown in FIG. 4, memory device 400 can include featuresand materials similar to, or identical to, those of memory device 200 ofFIG. 2J. Thus, for simplicity, similar or identical features andmaterials in between FIG. 4 and FIG. 2A through FIG. 2J are not repeatedin the description associated with FIG. 4.

As shown in FIG. 4, memory device 400 can include a substrate 401 and amaterial 402 between source material 101 and substrate 401. Substrate401 may include a semiconductor (e.g., silicon) substrate. Material 402may include a transition metal combined with a semiconductor material.For example, material 402 may include a silicide material (e.g.,tungsten silicide). In an alternative structure, material 402 is omittedfrom device 400, such that source material 201 can directly contactsubstrate 401.

The illustrations of the apparatuses (e.g., memory devices 100, 200,300, and 400) and methods (e.g., processes described above withreference to FIG. 1A through FIG. 4) are intended to provide a generalunderstanding of the structure of different embodiments and are notintended to provide a complete description of all the elements andfeatures of an apparatus that might make use of the structures describedherein.

The apparatuses and methods described above can include or be includedin high-speed computers, communication and signal processing circuitry,single or multi-processor modules, single or multiple embeddedprocessors, multi-core processors, message information switches, andapplication-specific modules including multilayer, multi-chip modules.Such apparatuses may further be included as sub-components within avariety of other apparatuses (e.g., electronic systems), such astelevisions, cellular telephones, personal computers (e.g., laptopcomputers, desktop computers, handheld computers, tablet computers,etc.), workstations, radios, video players, audio players (e.g., MP3(Motion Picture Experts Group, Audio Layer 3) players), vehicles,medical devices (e.g., heart monitor, blood pressure monitor, etc.), settop boxes, and others.

The embodiments described above with reference to FIG. 1 through FIG. 4include apparatuses and methods having a source material, a dielectricmaterial over the source material, a select gate material over thedielectric material, a memory cell stack over the select gate material,a conductive plug located in an opening of the dielectric material andcontacting a portion of the source material, and a channel materialextending through the memory cell stack and the select gate material andcontacting the conductive plug. Other embodiments, including additionalapparatuses and methods, are described.

The above description and the drawings illustrate some embodiments toenable those skilled in the art to practice the embodiments of theinvention. Other embodiments may incorporate structural, logical,electrical, process, and other changes. Examples merely typify possiblevariations. Portions and features of some embodiments may be includedin, or substituted for, those of other embodiments. Many otherembodiments will be apparent to those of skill in the art upon readingand understanding the above description.

1. An apparatus comprising: a source material; a dielectric materialover the source material, the dielectric material including an opening,the opening including a recess, the recess including a first recesssidewall and a second recess sidewall opposite from the first recesssidewall; a select gate material over the dielectric material, theselect gate material including an opening having a first side wall and asecond sidewall opposite from the first sidewall; a memory cell stackover the select gate material; a conductive plug located in the openingincluding the recess of the dielectric material and contacting a portionof the source material; and a channel material extending through thememory cell stack and through the select gate material between the firstand second sidewalls of the select gate material and contacting theconductive plug, wherein a distance between the first and second recesssidewalls is greater than a distance between the first and secondsidewalls of the opening of the select gate material.
 2. The apparatusof claim 1, wherein the dielectric material includes a dielectricconstant greater than a dielectric constant of silicon dioxide.
 3. Theapparatus of claim 1, further comprising an additional dielectricmaterial surrounded by at least a portion of the channel material. 4.The apparatus of claim 1, wherein the source material includes aconductively-doped polysilicon.
 5. The apparatus of claim 1, furthercomprising a silicon nitride material between the channel material andthe select gate material.
 6. The apparatus of claim 5, furthercomprising silicon dioxide material between the channel material and theselect gate material.
 7. The apparatus of claim 1, further comprisingoxide-nitride-oxide (ONO) material between the channel material and theselect gate material.
 8. The apparatus of claim 1, wherein the selectgate material includes conductively-doped polysilicon.
 9. The apparatusof claim 1, further comprising an additional dielectric material locatedin the recess and in between the conductive plug and the dielectricmaterial over the source material.
 10. The apparatus of claim 9, furthercomprising polysilicon material in the recess.
 11. An apparatuscomprising: a source material; a dielectric material over the sourcematerial, the dielectric material including an opening; a select gatematerial over the dielectric material; a memory cell stack over theselect gate material; a conductive plug located in the opening of thedielectric material and contacting a portion of the source material; achannel material extending through the memory cell stack and the selectgate material and contacting the conductive plug; and a transition metalcombined with a semiconductor material, such that the source material isbetween the dielectric material and the transition metal combined withthe semiconductor material.
 12. The apparatus of claim 1, furthercomprising an additional select gate material over the memory cellstack.
 13. An apparatus comprising: a source material; a firstdielectric material over the source material, the first dielectricmaterial including a dielectric constant greater than a dielectricconstant of silicon dioxide; a source-side select (SGS) gate materialover the first dielectric material; levels of memory cells over the SGSselect gate material; and a cell pillar extending through the levels ofmemory cells, the SGS gate material, and the first dielectric material,the cell pillar including a conductive plug contacting the sourcematerial, a channel material contacting the conductive plug, and asecond dielectric material surrounded by at least a portion of thechannel material.
 14. The apparatus of claim 13, wherein the conductiveplug has a thickness of at least one-half of a thickness of the firstdielectric material.
 15. The apparatus of claim 13, wherein the firstdielectric material has a thickness greater than 30 nanometers.
 16. Theapparatus of claim 13, wherein the conductive plug includesconductively-doped semiconductor material of n-type.
 17. The apparatusof claim 13, wherein the second dielectric material has a dielectricconstant less than the dielectric constant of the first dielectricmaterial.
 18. An apparatus comprising: a source material; a firstdielectric material over the source material, the first dielectricmaterial including a dielectric constant greater than a dielectricconstant of silicon dioxide; a source-side select (SGS) gate materialover the first dielectric material; levels of memory cells over the SGSselect gate material; a cell pillar extending through the levels ofmemory cells, the SGS gate material, and the first dielectric material,the cell pillar including a conductive plug contacting the sourcematerial, a channel material contacting the conductive plug, and asecond dielectric material surrounded by at least a portion of thechannel material; and a substrate and a silicide material between thesubstrate and the source material.
 19. A method comprising: forming asource material; forming a dielectric material over the source material;forming a source-side select (SGS) gate material over the dielectricmaterial; forming alternating levels of materials over the SGS gatematerial; forming a first portion of a cell pillar, the first portion ofthe cell pillar contacting the source material and located between thealternating levels of materials and the source material; and forming asecond portion of the cell pillar after the first portion of the cellpillar is formed, the second portion of the cell pillar contacting thefirst portion of the cell pillar and extending through the alternatinglevels of materials.
 20. The method of claim 19, wherein the dielectricmaterial has a dielectric constant greater than a dielectric constant ofsilicon dioxide.
 21. The method of claim 19, further comprising:introducing dopants into the first portion of the cell pillar; andintroducing dopants into the second portion of the cell pillar, whereina concentration of the first dopants is different from a concentrationof the second dopants.
 22. The method of claim 19, wherein forming thealternating levels of materials includes forming a number of levels ofconductor materials and a number of levels of dielectric materials. 23.The method of claim 19, further comprising: forming levels of memorycells in the alternating levels of materials before forming the firstportion of the cell pillar.
 24. The method of claim 19, furthercomprising: forming levels of memory cells in the alternating levels ofmaterials after forming the first portion of the cell pillar.
 25. Themethod of claim 19, further comprising: forming an additional dielectricmaterial in a space surrounded by part of the second portion of the cellpillar.
 26. (canceled)
 27. A method comprising: forming a sourcematerial; forming a dielectric material over the source material;forming a select gate material over the dielectric material; formingalternating levels of materials over the select gate material; formingan opening through the alternating levels of materials, the select gatematerial, and the dielectric material, such that a portion of the sourcematerial is exposed through the opening; forming a conductive plugcontacting the portion of the source material that is exposed throughthe opening; and forming a channel material extending through thealternating levels of materials and the select gate material andcontacting the conductive plug, wherein forming the conductive plugincludes growing an epitaxial material from the portion of the sourcematerial, such that the epitaxial material is part of the conductiveplug.
 28. The method of claim 27, further comprising: introducingdopants into the epitaxial material while the epitaxial material isformed.
 29. The method of claim 27, further comprising: introducingdopants into the epitaxial material after the epitaxial material isformed.
 30. The method of claim 27, wherein the dielectric materialincludes aluminum oxide.
 31. The method of claim 27, further comprising:forming a first additional dielectric material before forming theconductive plug, such that the first additional dielectric material ison a sidewall adjacent the select gate material and adjacent thedielectric material over the source material.
 32. The method of claim31, further comprising: forming a second additional dielectric materialon the first additional dielectric material, wherein the first andsecond additional dielectric materials are not removed after the channelmaterial is formed.
 33. The method of claim 32, further comprising:forming a tunneling material between the channel material and the firstand second additional dielectric materials.
 34. The method of claim 26,wherein further comprising: forming an additional dielectric material ina recess between the conductive plug and the dielectric material overthe source material before forming the conductive plug.